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SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - JUNE 1996 COMPLEMENTARY TYPE - PARTMARKING DETAIL - 7 BSR40 BR1 BSR30 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -70 -60 -5 -2 -1 1 -65 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Collector Capacitance Emitter Capacitance Transition Frequency Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(sat) hFE 10 40 30 MIN. -70 -60 -5 -100 -50 -0.25 -0.5 -1.0 -1.2 120 20 120 100 500 650 pF pF MHz ns ns MAX. UNIT V V V nA A V V V V CONDITIONS. IC=-100A IC=-10mA IE=-10A VCB=-60V VCB=-60V, Tamb=125C IC =-150mA, IB=-15mA IC =-500mA, IB=-50mA IC=-150mA, IB=-15mA IC =-500mA, IB=-50mA IC =-100A, VCE =-5V IC =-100mA, VCE =-5V IC =-500mA, VCE =-5V VCB =-10V, f =1MHz VEB =-0.5V, f =1MHz IC=-50mA, VCE=-10V f =35MHz VCC =-20V, IC =-100mA IB1 =-IB2 =-5mA Cc Ce fT Ton Toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT551 datasheet. 3 - 65 |
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